The SMBT 3904 E6327 is an NPN silicon switching transistor designed for power management and industrial applications. It features a low collector-emitter saturation voltage and high DC current gain ranging from 0.1 to 100mA. The device is available in complementary types such as SMBT3906 and MMBT3906, with options including SMBT3904S for reel orientation. It has a maximum collector-emitter voltage of 40V, collector-base voltage of 60V, and can dissipate up to 330mW at 71°C. Suitable for precise switching and amplification tasks.
Collector-emitter saturation voltage: 0.2 to 0.3 V (Ic=10 to 50 mA)
Transition frequency: 100 MHz
Capacitances: collector-base, emitter-base vary with voltage
RoHS compliant, qualified under AEC Q101
Buy the Infineon Series SMBT3904 NPN Silicon Switching Transistor: SMBT3904E6327HTSA1
Order the Infineon SMBT3904 E6327 online today for reliable power switching in industrial and electronics projects. Designed with high DC current gain and low saturation voltage, this NPN transistor ensures efficient performance in demanding applications. Compact and RoHS compliant, it features a maximum collector-emitter voltage of 40V and a collector current of 200mA, making it ideal for power management, automation, and control systems. Purchase now for fast delivery and consistent quality in your projects.
Get Infineon SMBT3904E6327HTSA1 today—built for precision switching and long-lasting durability.
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