MAXIM INTEGRATED / ANALOG DEVICES DS1230Y-100+ Datasheet & Stock

The DS1230Y-100+ is a 256k Non-volatile SRAM is 262,144-bit, fully static, non-volatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular byte wide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.




10-year Minimum data retention in absence of external power

Data is automatically protected during power loss

Replaces 32k x 8 volatile static RAM, EEPROM or flash memory

Unlimited write cycles

Low-power CMOS

Full ±10% VCC operating range





Applications


Industrial





Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.