The BFU530W is an NPN wideband silicon RF transistor designed for high-speed, low noise applications up to 2 GHz. It features a low noise figure of 0.6 dB at 900 MHz, high maximum gain of 18.5 dB at 900 MHz, and operates with a collector-base voltage of 10 V. Suitable for broadband and low noise amplifiers, it comes in a compact SOT323 plastic package, qualifying for automotive and industrial RF applications. Its silicon technology ensures reliability and efficient performance across various electronic RF systems.
Enhance your RF design with the NXP BFU530W, a high-speed, low noise NPN transistor suitable for broadband and low noise applications up to 2 GHz. Its compact SOT323 package, low noise figure of 0.6 dB, and high gain of 18.5 dB at 900 MHz make it ideal for cutting-edge RF amplifiers, oscillators, and communication systems. Trust NXP’s proven silicon technology for reliable operation in automotive, industrial, and scientific RF applications. Order online today for fast delivery and optimal performance.
You can click on the BUY or RFQ button to purchase BFU530WX from an authorized NXP distributor.
You can download the BFU530WX datasheet or visit the NXP website for support.
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