The BFU580Q is a high-speed, medium power NPN silicon RF transistor in a compact plastic SOT89 package. It features low noise, high linearity, and high breakdown RF capabilities designed for broadband amplifiers up to 2 GHz, making it ideal for ISM, automotive, and high-voltage applications. Its specifications include a collector-emitter voltage of 12 V, collector-base voltage of 24 V, maximum collector current of 60 mA, transition frequency up to 10.5 GHz, and a power gain of 14 dB at 900 MHz. AEC-Q101 qualification ensures reliability in automotive environments.
Purchase the NXP BFU580Q RF Transistor online today to enhance your broadband RF amplifier designs. This high-speed NPN silicon transistor offers low noise, high linearity, and a transition frequency up to 10.5 GHz, making it perfect for applications up to 2 GHz including automotive and industrial RF systems. Its compact SOT89 package with exposed die pad ensures excellent heat transfer. With IEC and JEDEC ESD protections, it guarantees reliability and safety in critical RF circuitry. Get your RF components now for efficient and robust system performance.
You can click on the BUY or RFQ button to purchase BFU580QX from an authorized NXP distributor.
You can download the BFU580QX datasheet or visit the NXP website for support.
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