The RF Power Field Effect Transistor MRFE6S9060NR1 is a high-gain, broadband N-channel enhancement-mode lateral MOSFET designed for industrial and commercial applications up to 1000 MHz. It offers excellent performance in large-signal, common-source amplifiers used in base station equipment, providing high efficiencies, low distortion, and rugged construction. The device features integrated ESD protection, RoHS compliance, and a plastic package capable of withstanding +225°C. Its robust design ensures reliable operation in high-power RF environments, making it ideal for broadband and GSM EDGE applications.
ESD Protection: Human Body Model ≥ 2, Machine Model B, Charge Device Model IIL
Storage Temperature Range: -65°C to +150°C
Buy the Buy Freescale RF Power Transistor Part Number MRFE6S9060NR1 Online
Purchase the Freescale MRFE6S9060NR1 online today to enhance your RF systems with this high-power broadband transistor. Designed for demanding industrial and communication applications, it offers high gain, efficiency, and rugged construction. Ideal for base station broadband amplifiers, GSM EDGE, and N-CDMA systems, this transistor features integrated ESD protection, RoHS compliance, and a robust plastic package capable of operating at junction temperatures up to 225°C. Reliable and easy to install, it's the perfect choice for professional RF engineers seeking long-lasting performance.
Get Freescale MRFE6S9060NR1 today—built for high power, broadband RF amplification with rugged reliability and excellent efficiency.
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