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NXP MRFE6S9060NR1 RF Power Transistor

The RF Power Field Effect Transistor MRFE6S9060NR1 is a high-gain, broadband N-channel enhancement-mode lateral MOSFET designed for industrial and commercial applications up to 1000 MHz. It offers excellent performance in large-signal, common-source amplifiers used in base station equipment, providing high efficiencies, low distortion, and rugged construction. The device features integrated ESD protection, RoHS compliance, and a plastic package capable of withstanding +225°C. Its robust design ensures reliable operation in high-power RF environments, making it ideal for broadband and GSM EDGE applications.

Authorized Distributors
Source:DigiKey
Part No:MRFE6S9060NR1
Stock:120
Inv Date:06-10-2026
Price: Unit price: $97.94
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Source:DigiKey
Part No:MRFE6S9060NR1
Stock:0
Inv Date:06-10-2026
Price: Unit price: $69.8717
Buy/RFQ:
Part No:MRFE6S9060NR1
Stock:191
Inv Date:06-11-2026
Price: Unit price: $97.94
Buy/RFQ:
Part No:MRFE6S9060NR1
Stock:0
Inv Date:06-10-2026
Price: Unit price: $59.57
Buy/RFQ:

NXP MRFE6S9060NR1 RF Power Transistor Specifications:

  • Drain-Source Voltage Voss: -0.5 to +66 Vdc
  • Gate-Source Voltage Ves: -0.5 to +12 Vdc
  • Maximum Operation Voltage Vp: 32 V
  • Drain Efficiency: Up to 63%
  • Power Gain: 20 dB typically, 21.1 dB at 880 MHz
  • Output Power: 14 W average at 880 MHz; 21 W at 920-960 MHz
  • Spectral Regrowth: -78 dBc at 600 kHz offset
  • ACPR: -45.7 dBc at 750 kHz offset
  • Input/Output Capacitance: Ciss: 109 pF, Coss: 33 pF, Crss: 14 pF
  • Thermal Resistance Junction to Case: 0.77°C/W
  • Operating Junction Temperature: up to 225°C
  • RoHS compliant, plastic package, capable of handling 10:1 VSWR
  • Standards: JEDEC TO-270/TO-272 surface mount, RoHS compliant
  • ESD Protection: Human Body Model ≥ 2, Machine Model B, Charge Device Model IIL
  • Storage Temperature Range: -65°C to +150°C

Buy the Buy Freescale RF Power Transistor Part Number MRFE6S9060NR1 Online

Purchase the Freescale MRFE6S9060NR1 online today to enhance your RF systems with this high-power broadband transistor. Designed for demanding industrial and communication applications, it offers high gain, efficiency, and rugged construction. Ideal for base station broadband amplifiers, GSM EDGE, and N-CDMA systems, this transistor features integrated ESD protection, RoHS compliance, and a robust plastic package capable of operating at junction temperatures up to 225°C. Reliable and easy to install, it's the perfect choice for professional RF engineers seeking long-lasting performance.

Get Freescale MRFE6S9060NR1 today—built for high power, broadband RF amplification with rugged reliability and excellent efficiency.

Frequently Asked Questions

Where can I buy NXP MRFE6S9060NR1?

You can click on the BUY or RFQ button to purchase MRFE6S9060NR1 from an authorized NXP distributor.

How do I troubleshoot issues or seek technical support for part MRFE6S9060NR1?

You can download the MRFE6S9060NR1 datasheet or visit the NXP website for support.

Who is the manufacturer of MRFE6S9060NR1?

NXP

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