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ONSEMI 4N38SR2M High Voltage Phototransistor Optocoupler
The ONSEMI 4N38SR2M, along with the H11D1M, H11D3M, and MOC8204M, are phototransistor-type optically coupled optoisolators. These devices utilize a gallium arsenide infrared emitting diode paired with a high-voltage NPN silicon phototransistor, housed in a standard plastic six-pin dual-in-line package. They are commonly employed in power supply regulators, digital logic inputs, appliance sensor systems, microprocessor inputs, and industrial controls, providing robust electrical isolation and signal transmission. The device offers high voltage capabilities and safety regulatory approvals, making it suitable for a wide range of industrial applications.
ONSEMI 4N38SR2M High Voltage Phototransistor Optocoupler Specifications:
- description: Phototransistor−type optically coupled optoisolators.
- voltage_breakdown_moc8204m: 400 V
- voltage_breakdown_h11d1m: 300 V
- voltage_breakdown_h11d3m: 200 V
- voltage_breakdown_4n38m: 80 V
- ul_rating: 4,170 VACRMS for 1 Minute
- din_en_iec_rating: 850 V Peak Working Insulation Voltage
- storage_temperature: −40 to + 125 °C
- operating_temperature: −40 to + 100 °C
- junction_temperature: −40 to + 125 °C
- lead_solder_temperature: 260 °C for 10 seconds
- total_device_power_dissipation: 420 mW
- emitter_forward_dc_current: 80 mA
- reverse_input_voltage: 6.0 V
- forward_voltage: 1.15 to 1.50 V
- reverse_leakage_current: ≤ 10 μA
- current_transfer_ratio: 2 (20) mA (%)
- saturation_voltage: 0.1 to 0.4 V
- turn_on_time: ≤ 5 μs
- turn_off_time: ≤ 5 μs
- input_output_isolation_voltage: 4170 VACRMS
- isolation_capacitance: ≤ 0.2 pF
- isolation_resistance: ≥ 1011 Ω
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Frequently Asked Questions
Where can I buy ONSEMI 4N38SR2M?
You can click on the BUY or RFQ button to purchase 4N38SR2M from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part 4N38SR2M?
You can download the 4N38SR2M datasheet or visit the ONSEMI website for support.
Who is the manufacturer of 4N38SR2M?
ONSEMI