The DTC115EET1G is a monolithic NPN digital transistor with integrated bias resistors, designed to simplify circuit design, save space, and reduce component count. It features a collector-emitter voltage of 50 V, collector current of 100 mA, and is AEC-Q101 qualified for automotive applications. Suitable for use in digital switching and control circuits, it offers low input forward voltage and high switching speed. The device is available in a compact SC-75 package, with excellent thermal performance, making it ideal for compact, high-efficiency electronic systems.
ONSEMI DTC115EET1G Digital Transistor Specifications:
Collector-Base Voltage: 50 V
Collector-Emitter Voltage: 50 V
Collector Current: 100 mA
Input Forward Voltage: 40 V
Input Reverse Voltage: 10 V
Package: SC-75
Total Device Dissipation: 200 mw at 25°C
Junction to Ambient Thermal Resistance: 400 °C/W
Storage Temperature Range: -55°C to +150°C
Junction Temperature Range: -55°C to +150°C
Breakdown Voltage (Collector-Base): 50 V
Collector-Emitter Breakdown Voltage: 50 V
Base-Emitter Cutoff Current: 0.05 mA
Collector-Base Cutoff Current: 100 nA
Collector-Emitter Cutoff Current: 500 nA
DC Current Gain (hFE): 80 to 150
Buy the ON Semiconductor Series Digital Transistor: DTC115EET1G
Purchase the ON Semiconductor DTC115EET1G digital transistor online today. Designed to reduce system complexity by integrating bias resistors into a single compact device, it offers 50V collector-emitter voltage and 100mA collector current, perfect for space-efficient digital switching circuits. The device supports high-speed performance, low input voltage, and excellent thermal dissipation, making it suitable for automotive, industrial, and consumer electronics. Order now to enhance your circuit reliability and save valuable board space with this reliable, Pb-free component.
Get ON Semiconductor DTC115EET1G today—built for precision, space-saving design, and long-lasting durability.
Frequently Asked Questions
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