The BCP56 series comprises high current NPN silicon epitaxial transistors designed for medium power applications such as audio amplifiers. Encased in SOT-223 packages, these devices support surface mount technology with a maximum collector current of 1.0A, collector-emitter voltage of 80V, and collector-base voltage of 100V. They are qualified under automotive standards, Pb-Free, RoHS, Halogen-Free, and feature thermal stability with a maximum junction temperature of 150°C. Ideal for switching and amplification in compact electronics, they offer reliable performance with low saturation voltage and high gain bandwidth.
ONSEMI BCP5616T1G Medium Power NPN Transistor Specifications:
Collector-Emitter Voltage: 80 V
Collector-Base Voltage: 100 V
Emitter-Base Voltage: 5 V
Collector Current: 1 A
Total Power Dissipation: 15 W at 26°C, derates 12 mW/°C above 25°C
Operating Temperature Range: -65°C to 150°C
Thermal Resistance, Junction to Ambient: 83.3 °C/W
Maximum Soldering Temperature: 260°C for 10 seconds
DC Current Gain (hFE): 25 to 250 depending on variant
Collector-Emitter Saturation Voltage: 0.05 V at 500 mA collector current
Base-Emitter On Voltage: 1.0 V at 500 mA base current
Supported in SOT-223 package, RoHS and Pb-Free compliant
Buy the Buy ON Semiconductor BCP56 Series Part Number BCP5616T1G Online
Purchase the ON Semiconductor BCP56 series transistors online for dependable medium power switching and amplification. Designed in SOT-223 surface mount packages, these devices support high current of 1A, with a collector-emitter voltage of 80V. They are suitable for audio amplification, switching, and electronic circuit applications. Featuring RoHS compliance and automotive qualifications, they guarantee high performance, thermal stability, low saturation voltage, and robust operation in compact, high-reliability environments. Order now for quick delivery and optimized electronic designs.
Buy ON Semiconductor BCP5616T1G now and experience reliable switching and amplification in your electronics projects.
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