The BD13616STU is a PNP epitaxial silicon transistor suitable for medium power linear and switching applications. Featuring a TO-126 package, it complements other models like BD135, BD137, and BD139, and offers reliable performance in demanding environments. This transistor's key features include a collector-emitter voltage of -80 V, collector current of 1.5 A, and a junction temperature of up to 150°C, making it ideal for linear amplification and switching functions in various industrial and electronic systems. The device operates within specified maximum ratings to ensure safe and reliable operation.
ONSEMI BD13616STU Medium Power PNP Transistor Specifications:
Package: TO-126
Collector-Base Voltage: -80 V
Collector-Emitter Voltage: -80 V
Emitter-Base Voltage: 5 V
Collector Current (DC): 1.5 A
Collector Dissipation: 1.25 W at 25°C
Junction Temperature: 150°C
Storage Temperature: -55°C to +150°C
Power Dissipation: 1.25 W at 25°C
Gain (hFE): 40 to 250 at collector current of -150mA
Collector-Emitter Saturation Voltage: -0.5 V at 500 mA
Buy the Fairchild BD13616STU – Reliable Transistor for Industrial Applications
Order the Fairchild BD13616STU online now for dependable performance in linear and switching applications. Its TO-126 package ensures easy integration into your circuit designs. With a maximum collector-emitter voltage of -80 V and a DC collector current of 1.5 A, this transistor offers high efficiency and reliable operation in industrial electronics, amplifiers, and switching systems. The device's junction temperature and power dissipation ratings make it suitable for high-temperature environments, ensuring durability and stable performance over extended use.
Get Fairchild BD13616STU today—built for precision and long-lasting durability in industrial electronics.
Frequently Asked Questions
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