The FCP165N60E is a high-voltage N-Channel SuperFET II MOSFET designed for industrial power supplies and telecom applications. It features a drain-source voltage of 600 V, low on-resistance of 132 mΩ at 10 V gate drive, and ultra low gate charge of 57 nC for efficient switching. With a continuous drain current of 23 A and avalanche energy of 525 mJ, it is suitable for demanding power management tasks. The device is RoHS compliant, 100% avalanche tested, and provides excellent performance in high-frequency switching circuits, making it a reliable choice for industrial and server power systems.
ONSEMI FCP165N60E High Voltage Power MOSFET Specifications:
Drain-Source Voltage: 600 V
Gate Threshold Voltage: 2.5 - 3.6 V
Maximum Drain Current: 23 A
Pulsed Avalanche Energy: 525 mJ
Gate Charge: 57 nC
Output Capacitance (Coss): 204 pF
Input Capacitance (Ciss): 1830 pF
Thermal Resistance Junction to Case: 0.55°C/W
Thermal Resistance Junction to Ambient: 40°C/W
Operating Temperature Range: -55°C to +150°C
Package: TO-220
RoHS Compliant, 100% Avalanche Tested
Maximum Power Dissipation: 227 W
Buy the Fairchild FCP165N60E – Reliable SuperFET II Power MOSFET for Industrial Applications
Purchase the Fairchild FCP165N60E online today and enhance your power management systems with this high-voltage, low on-resistance N-Channel MOSFET. Designed for industrial and telecom power supplies, it offers exceptional switching performance, low gate charge, and high avalanche energy, ensuring reliable operation under demanding conditions. Its robust construction and RoHS compliance make it suitable for a wide range of power applications, providing efficiency, durability, and safety for your projects. Buy now and experience superior performance!
Get Fairchild FCP165N60E today—built for precision and long-lasting durability in high-voltage power switching.
Frequently Asked Questions
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