The Silicon Carbide Schottky Diode provides high efficiency and exceptional thermal performance for industrial power systems. With a voltage rating of 1200 V and a forward current of 20 A, it delivers fast switching, low reverse recovery, and reliable operation. Suitable for automotive HEV-EV onboard chargers, DC-DC converters, and high-power switching applications, this diode features a max junction temperature of 175°C, avalanche rated at 200 mJ, and ease of paralleling. Its robust design ensures high surge capacity and thermal stability, making it ideal for demanding industrial and automotive environments.
Non-Repetitive Peak Forward Surge Current: 1190 A at 25°C
Operating Temperature Range: -55°C to +175°C
Thermal Resistance, Junction to Case: Max 0.45 °C/W
Forward Voltage (at 20A, 25°C): 1.45 V
Reverse Current (at 1200V, 25°C): 200 A
Power Dissipation (at 25°C): 333 W
Case Type: D2PAK (TO-263, 3-Lead)
Max Junction Temperature: 175°C
Isolated case with high surge capacity and avalanche capability
Fully qualified to AEC-Q101 standards for automotive use
Buy the ON Semiconductor FFSB20120A – Reliable Silicon Carbide Diode for Industrial Applications
Purchase the ON Semiconductor FFSB20120A silicon carbide diode online now to ensure your power systems benefit from superior switching performance, high surge capacity, and reliable thermal operation. Perfect for automotive HEV-EV chargers, DC-DC converters, and industrial power management, this diode guarantees efficiency and durability in demanding environments. With a voltage rating of 1200V and a 20A current capacity, it offers fast switching, no reverse recovery, and high avalanche energy tolerance, making it an ideal choice for high-power applications that require reliability and performance.
Order your ON Semiconductor FFSB20120A diode today and enhance your power systems with dependable, high-efficiency silicon carbide technology designed for critical industrial and automotive applications.
Frequently Asked Questions
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