The FCD4N60TM is a high-voltage N-channel SuperFET super-junction MOSFET utilizing charge balance technology for low on-resistance and gate charge. It minimizes conduction losses, provides excellent switching performance with high dV/dt capability, and supports higher avalanche energy, making it ideal for switching power applications such as PFC, server and telecom power supplies, flat-panel display power, ATX power supplies, and industrial systems. Features include ultra-low gate charge of 12.8 nC, output capacitance of 32 pF, and 100% avalanche testing. Suitable for power management, industrial automation, lighting, and renewable energy.
Experience superior power switching with the Fairchild FCD4N60TM High-Voltage Power MOSFET. Its low gate charge of 12.8 nC and output capacitance of 32 pF ensure efficient and fast switching performance. Designed with charge balance technology, it minimizes conduction loss and supports high dV/dt rates for demanding applications like power supplies, industrial automation, and renewable energy systems. Fully avalanche tested, RoHS compliant, and capable of handling up to 600 V, this robust device is essential for high-efficiency power management solutions. Purchase online today and elevate your power systems with confidence.
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You can download the FCD4N60TM datasheet or visit the ONSEMI website for support.
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