This is an NPN silicon transistor designed for high voltage operation and high reliability. It offers fast switching speed and a wide safe operating area (SOA), making it suitable for various high-performance electronic applications.
ONSEMI FJPF5021OTU High Voltage NPN Transistor Specifications:
Collector-Base Breakdown Voltage: 800 V
Collector-Emitter Sustaining Voltage: 500 V
Emitter-Base Breakdown Voltage: 7 V
Collector Current: 15-50 A
Base Current: 1 A
Collector Cut-off Current: 10 μA
Emitter Cut-off Current: 10 μA
DC Current Gain: 15-50
Collector-Emitter Saturation Voltage: 1 V
Base-Emitter Saturation Voltage: 1.5 V
Output Capacitance: 80 pF at 10 V
Current Gain Bandwidth Product: 15 MHz
Switching Time: 0.5 μs
Storage Time: 3 μs
Fall Time: 0.3 ns
Package: TO-220F
Maximum Power Dissipation: 150 W
Case Temperature Range: -55°C to +150°C
Dimensions: Standard TO-220F package, with support pin hole option available
Buy the ON Semiconductor FJPF5021OTU – Reliable High Voltage NPN Transistor for Industrial Applications
Purchase the ON Semiconductor FJPF5021OTU online today and enhance your high-voltage, high-reliability electronic projects. This NPN silicon transistor offers fast switching, wide SOA, and robust performance, making it perfect for industrial automation, power supply, and switching applications. With excellent thermal stability and a durable package, it ensures reliable operation under demanding conditions. Shop now to access this high-performance transistor and elevate your electronic designs with precision and confidence.
Buy ON Semiconductor FJPF5021OTU now and experience unmatched reliability and high-voltage performance in critical industrial circuits.
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