The FQB22P10 is a P-Channel enhancement mode power MOSFET designed for high-efficiency switching applications. With a drain-source voltage of -100 V and continuous drain current of -22 A at 25°C, it features low gate charge and low Crss, making it suitable for power supplies, motor control, and audio amplifiers. Its robust avalanche energy rating and high junction temperature capability ensure reliable performance in demanding environments, offering superior switching performance, reduced on-resistance, and excellent thermal stability for modern electronic systems.
Discover the high-quality power MOSFET designed for demanding applications like power supplies, motor control, and audio amplifiers. The FQB22P10 features a -100 V drain-source voltage, -22 A continuous drain current, low gate charge, and high avalanche energy. Its excellent thermal performance and low on-resistance ensure efficient operation and durability. Ideal for engineers and technicians seeking dependable components for high-power switching, this device guarantees superior performance, thermal stability, and long-term reliability in your electronic designs. Purchase online today for rapid delivery and technical support.
Order your Fairchild Series FQB22P10 power MOSFET today and enhance your electronic projects with high efficiency and reliable switching performance.
Frequently Asked Questions
Where can I buy ONSEMI FQB22P10TM?
You can click on the BUY or RFQ button to purchase FQB22P10TM from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part FQB22P10TM?