This P-Channel enhancement mode power MOSFET features -60 V, -27 A, and a low on-resistance of 70 mΩ, produced using proprietary planar stripe and DMOS technology. It offers high avalanche energy, low gate charge of 33 nC, and superior switching performance. Designed for switch mode power supplies, motor control, and audio amplifiers, it is tested with 100% avalanche testing for reliability, and with a maximum junction temperature of 475°C, ensuring stable operation across diverse industrial and power management applications.
Switching Delay Times: Turn-On 45 ns, Turn-Off 30-70 ns, Fall Time 90-190 ns
Body Diode: Forward Voltage: -4.0 V, Recovery Time: 105 ns
Buy the ON Semiconductor FQB27P06 – Reliable Power MOSFET for Industrial Applications
Purchase the ON Semiconductor FQB27P06 power MOSFET online today and benefit from high efficiency, low on-resistance, and superior switching performance. Designed for industrial power supply, motor control, and audio amplifier applications, this device offers guaranteed avalanche energy testing and high thermal stability, ensuring dependable operation in demanding environments. Convenient online ordering ensures quick delivery, enabling you to enhance your projects with a trusted component that delivers consistent high performance and reliability for all your power switching needs.
Buy ON Semiconductor FQB27P06 power MOSFET now and experience unmatched reliability and performance for your power management needs.
Frequently Asked Questions
Where can I buy ONSEMI FQB27P06TM?
You can click on the BUY or RFQ button to purchase FQB27P06TM from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part FQB27P06TM?