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ONSEMI HGTG30N60C3D High-Voltage IGBT
The HGTG30N60C3D is an N-channel IGBT with an anti-parallel hyperfast diode. It is part of the UFS series, a high-voltage switching device that combines the superior features of MOSFETs and bipolar transistors. The device offers high input impedance characteristic of MOSFETs and the low conduction losses typical of bipolar transistors. Its ON-state voltage drop remains relatively stable between 25°C and 150°C. The IGBT utilizes the development type TA49051, and the anti-parallel diode is the TA49053. This device is ideal for high-voltage switching applications operating at moderate frequencies where low conduction losses are important. It features a short-circuit rating of 230ns fall time at a junction temperature of 150°C and supports a total power dissipation of 208W at a collector case temperature of 25°C. Suitable for power management applications.
ONSEMI HGTG30N60C3D High-Voltage IGBT Specifications:
- Collector to Emitter Voltage: 600 V
- Collector Current Continuous: 63 A at 25°C
- Collector Current at 110°C: 30 A
- Diode Forward Current at 110°C: 25 A
- Pulsed Collector Current: 252 A
- Gate to Emitter Voltage: 420 V continuous, 430 V pulsed
- Switching Safe Operating Area at Tj: 60 A at 600 V
- Total Power Dissipation at Tc=25°C: 208 W
- Operating Junction Temperature Range: -40°C to 150°C
- Collector to Emitter Breakdown Voltage: 600 V
- Collector to Emitter Leakage Current: 250 µA at 25°C
- Gate to Emitter Threshold Voltage: 3.0 to 6.0 V
- Short Circuit Withstand Time at Vgg=15V: 4 µs
- Power Dissipation Derating: 1.67 W/°C above 25°C
- Reverse Recovery Time of Diode: 52 ns
Buy the Buy ON Semiconductor HGTG30N60C3D Part Number HGTG30N60C3D Online
Purchase the ON Semiconductor HGTG30N60C3D high-voltage IGBT with hyperfast diode online today. Designed for power management and moderate frequency switching, it offers a collector voltage of 600V, continuous collector current of 63A, and a power dissipation of 208W. This device features stable on-state voltage drops, short-circuit resilience, and efficient switching capabilities. Perfect for industrial applications requiring reliable high-voltage switching, it ensures low conduction and switching losses with excellent thermal performance. Buy now for superior performance and durability.
Order your ON Semiconductor HGTG30N60C3D high-voltage IGBT with hyperfast diode today and ensure reliable power switching at moderate frequencies.
Frequently Asked Questions
Where can I buy ONSEMI HGTG30N60C3D?
You can click on the BUY or RFQ button to purchase HGTG30N60C3D from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part HGTG30N60C3D?
You can download the HGTG30N60C3D datasheet or visit the ONSEMI website for support.
Who is the manufacturer of HGTG30N60C3D?
ONSEMI