The MMBT2222ATT1G is a general-purpose NPN silicon transistor ideal for amplification and switching in low-power surface-mount applications. Encased in a SOT-416 package, it offers a collector-emitter voltage of 40 V, collector-base voltage of 75 V, and a maximum collector current of 600 mAdc. Designed for reliability, it’s RoHS compliant, Pb-Free, halogen and BFR-Free, and suited for automotive and industrial use. Its thermal resistance is 833 °C/W, with a dissipation of 150 mW. The device features high DC current gain, fast switching, and low saturation voltage, making it versatile for various electronic circuits.
ONSEMI MMBT2222ATT1G General Purpose Transistor Specifications:
Collector-Emitter Voltage: 40 V
Collector-Base Voltage: 75 V
Emitter-Base Voltage: 6.0 V
Collector Current: 600 mA
Total Device Dissipation: 150 mW
Thermal Resistance, junction-to-ambient: 833 °C/W
Operating Temperature Range: -55°C to +150°C
Package: SOT-416 (CASE 463-01)
RoHS, Pb-Free, Halogen Free, BFR Free
Max Junction Temperature: 150°C
Buy the ON Semiconductor Series General Purpose Transistor: MMBT2222ATT1G
Purchase the ON Semiconductor MMBT2222ATT1G transistor online today and enhance your electronic projects with reliable, high-performance amplification and switching. Its compact SOT-416 package makes it ideal for surface-mount applications needing low power consumption and high efficiency. This versatile NPN silicon transistor features a collector-emitter voltage of 40 V and a maximum collector current of 600 mA, ensuring excellent performance across automotive, industrial, and consumer electronics. Trust in its RoHS compliance and robust thermal characteristics for consistent, long-term operation.
Get ON Semiconductor MMBT2222ATT1G today—built for precision, high current gain, and long-lasting durability in your electronic designs.
Frequently Asked Questions
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