The MMBT2484LT1G is an NPN bipolar junction transistor optimized for high gain and low noise amplification in industrial and power management applications. Housed in a surface-mount package, it offers low power consumption, low RDS(on), and compact size, making it ideal for efficient circuit design and space-saving solutions. Its high collector-emitter voltage capability of 60V and high DC current gain ensure reliable performance in sensitive amplification and switching tasks, making it suitable for various electronic systems requiring low noise operation and robust gain characteristics.
Saturation Voltage VCE(sat): 0.35 V at 1.0 mA collector current
Base-Emitter On Voltage VBE(on): 0.95 V
Noise Figure: 3.0 dB
Output Capacitance: 6.0 pF
Input Capacitance: 6.0 pF
Collector Cutoff Current: 10 nA at 45 V
Emitter Cutoff Current: 10 nA at 5.0 V
Maximum Storage and Operating Temperature: -55°C to +150°C
Buy the ON Semiconductor MMBT2484LT1G – Reliable Low Noise Transistor for Industrial Applications
Purchase the ON Semiconductor MMBT2484LT1G today for high-performance low noise amplification in your industrial systems. This reliable NPN transistor offers high gain, low RDS(on), and excellent thermal stability, making it ideal for sensitive electronic circuits. Its compact SOT-23 package saves valuable board space while providing consistent, dependable operation at voltages up to 60V. Whether designing power management solutions or general-purpose amplifiers, this transistor's robust features ensure optimal performance. Order online now for fast delivery and seamless integration into your projects.
Order your ON Semiconductor MMBT2484LT1G low noise transistor today and enhance your industrial electronics with dependable high-gain performance and space-efficient design.
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