The MMBZ33VALT1G is a dual monolithic silicon Zener diode designed for transient overvoltage protection in voltage and ESD sensitive equipment. It features a compact SOT-23 package, offering dual junction protection with a common anode configuration, suitable for PCBs where space is limited. With peak power dissipation of 24 or 40 W, it provides reliable ESD and transient suppression for applications such as communication systems, medical devices, and computers. Its RoHS compliance and UL 94 V-0 flammability rating ensure safety and environmental standards are met.
Peak Power Dissipation: 24 W @ 1.0 ms for voltages 3 V to 26 V, 40 W for higher voltages
Maximum Reverse Peak Pulse Current: 5A
Breakdown Voltage Range: 5.6 V to 47 V
Working Peak Reverse Voltage: 3 V to 26 V
Peak Power: 24 or 40 W
ESD Rating: Class 3B (>16 kV human body model), Class C (>400 V machine model)
Absolute Maximum Temperature: 150°C
Maximum Junction Temperature: 150°C
Storage Temperature Range: -55°C to +150°C
Soldering Temperature (10 sec): 260°C
Flammability: UL 94 V-0
Lead Finish: Corrosion resistant, solderable
RoHS Compliant, Pb-Free
Designed for high density applications with tape and reel packaging options
Buy the On Semiconductor Series MMBZ Zener Diodes: MMBZ33VALT1G
Purchase the ON Semiconductor MMBZ33VALT1G dual Zener diode online today for dependable voltage and ESD protection. Compact in SOT-23 package, it is ideal for electronics requiring space-efficient transient suppression. With a peak power rating of up to 40 W, it safeguards sensitive equipment like computers, communication systems, and medical devices against voltage spikes and electrostatic discharges. Its RoHS compliance and UL flammability rating ensure safety and environmental standards, providing peace of mind and consistent performance in high-density PCB designs.
Buy ON Semiconductor MMBZ33VALT1G now and experience unmatched reliability and performance in transient overvoltage and ESD protection applications.
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