The NDS0610 is a P-Channel enhancement mode field effect transistor built using high-density DMOS technology. Designed for low voltage applications, it provides fast switching, rugged performance, and low on-state resistance up to 120mA DC current, with maximum load of 1A. Suitable for high-side switching in compact circuits, it features high saturation current, reliable operation from -55°C to +150°C, and a package that ensures efficient heat dissipation and durability. Ideal for low current, high side switching in various electronic control systems.
Operating Junction Temperature Range: -55°C to +150°C
Thermal Resistance Junction-to-Ambient: 350°C/W
Gate Threshold Voltage: -1 V to -1.7 V
On-Resistance: 13 to 20 Ohms (at Vgs= -4.5V and -10V)
Drain-Source Breakdown Voltage: 60 V
Maximum Lead Soldering Temperature: 300°C for 10 seconds
Package: SOT-23 G
Reverse Diode Forward Voltage: 0.8 V at 0.24 A
Gate Resistance: 10 Ohms
Total Gate Charge: 18 to 25 nC
Buy the Buy ON Semiconductor NDS0610 Part Number NDS0610 Online
Purchase the ON Semiconductor NDS0610 online today to ensure high reliability and fast switching in your electronic designs. This P-Channel enhancement mode FET offers low on-resistance, robust performance, and efficient thermal management, making it ideal for low voltage high-side switching applications. Perfect for compact control systems where space and power efficiency are critical, the NDS0610 provides dependable operation with maximum load currents up to 1A. Secure your supply chain with this durable, high-performance transistor for customized electronic solutions.
Get ON Semiconductor NDS0610 today—built for low voltage switching, fast response, and reliable high-side control in compact electronic circuits.
Frequently Asked Questions
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You can click on the BUY or RFQ button to purchase NDS0610 from an authorized ONSEMI distributor.
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You can download the NDS0610 datasheet or visit the ONSEMI website for support.
Who is the manufacturer of NDS0610?
ONSEMI
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