The N-channel MOSFET is a high-performance power transistor suitable for various industrial applications such as power tools, UAVs, and home automation systems. It features a drain-to-source voltage of 100 V, a low Rds(on) of 9.0 mΩ at 10 V, and a continuous drain current of 60 A. Its low gate charge and capacitance minimize driver losses, while its low Rds(on) reduces conduction losses. The device is RoHS, Pb-Free, and halogen-free, offering reliable, eco-friendly performance in high-power switching environments. It includes thermal management features with RθJ-C of 22°C/W.
ONSEMI NTBS9D0N10MC N-channel Power MOSFET Specifications:
Drain-to-Source Voltage: 100 V
Continuous Drain Current: 60 A
Pulsed Drain Current: 239 A
Rds(on): 9.0 mΩ at 10 V
Gate-to-Source Voltage: ±20 V
Maximum Power Dissipation: 68 W
Thermal Resistance Junction-to-Case: 22°C/W
Thermal Resistance Junction-to-Ambient: 40°C/W
Junction and Storage Temperature Range: -55°C to 175°C
Body Diode Source Current: 57 A
Avalanche Energy: 181.5 mJ
Lead Soldering Temperature: 260°C for 10 s
Buy the ON Semiconductor NTBS9DON10MC – Reliable N-Channel MOSFET for Industrial Applications
Enhance your electronic projects with the N-channel Power MOSFET designed for high-power applications. With 100V, 60A rating and low Rds(on), it minimizes conduction and switching losses. Ideal for power tools, drones, and home automation, this eco-friendly, RoHS-compliant transistor ensures reliable performance under demanding conditions. Its low gate charge reduces driver losses, enabling efficient switching. Soldering at 260°C ensures secure mounting, while thermal resistance characteristics support thermal management. Perfect for engineers seeking robust, high-efficiency power switching components.
Order your ON Semiconductor NTBS9DON10MC power MOSFET today and upgrade your power management solutions with this highly efficient and reliable component.
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