The NTHL095N65S3HF is a high-voltage N-channel power MOSFET designed for industrial and power supply applications. It features a drain-source voltage of 650 V, a continuous drain current of 36 A, and ultra-low gate charge of 66 nC. Built with charge balance technology, it offers low on-resistance, superior switching performance, and excellent avalanche ruggedness. Its TO-247 package with long leads provides easy mounting, making it ideal for telecom, server power supplies, UPS, solar, and EV chargers, supporting high efficiency and miniaturization in complex electronic systems.
ONSEMI NTHL095N65S3HF High-Voltage Power MOSFET Specifications:
Drain-Source Voltage: 650 V
Gate-Source Voltage: -DC 430 V
Continuous Drain Current: 36 A at 25°C
Pulsed Drain Current: 90 A
Avalanche Energy: 440 mJ
Power Dissipation: 272 W at 25°C
Operating Temperature Range: -55°C to +150°C
Thermal Resistance, Junction to Case: 0.46 °C/W
Thermal Resistance, Junction to Ambient: 40 °C/W
Gate Charge at 10 V: 66 nC
Output Capacitance: 569 pF
Body Diode Forward Voltage: 1.3 V at 18 A
Package: TO-247 with long leads
Buy the ON Semiconductor Series SuperFET III N-Channel Power MOSFET: NTHL095N65S3HF
Experience the exceptional power handling and low conduction losses of the High-Voltage Power MOSFET designed for demanding industrial and power supply applications. Featuring a drain-source voltage of 650 V and a continuous drain current of 36 A, it offers ultra-low gate charge of 66 nC, ensuring efficient switching and reduced gate driver losses. Encased in TO-247 long leads, this device supports easy mounting and superior thermal management. Ideal for telecom, UPS, solar, and EV charging systems, it enhances system efficiency, reliability, and miniaturization.
Order your ON Semiconductor Series SuperFET III NTHL095N65S3HF today and give your power systems the dependable high-voltage switching performance they deserve.
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