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STMICROELECTRONICS 2STR2230 Low Voltage PNP Transistor

The STMicroelectronics 2STR2230 is a PNP power transistor designed with advanced PB-HCD (Power Bipolar High Current Density) technology. This results in a transistor exhibiting high current gain and a very low collector-emitter saturation voltage. It is well-suited for applications requiring fast switching speeds and efficient power management, such as LED lighting, motherboard and hard disk drive power, mobile equipment, battery chargers, and voltage regulation circuits. The device is compliant with European Directive 2002/93/EC and is available in an ECOPACK® package for environmentally conscious designs.

Authorized Distributors
Source:Newark
Part No:2STR2230
Stock:510
Inv Date:06-11-2026
Price: Unit price: $0.599
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Source:DigiKey
Part No:2STR2230
Stock:3871
Inv Date:06-11-2026
Price: Unit price: $0.6
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Part No:2STR2230
Stock:16187
Inv Date:06-12-2026
Price: Unit price: $0.6
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Part No:2STR2230
Stock:0
Inv Date:06-11-2026
Price: Unit price: $0.24
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Part No:2STR2230
Stock:0
Inv Date:06-11-2026
Price: Unit price: $0.092
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Source:Arrow EU
Part No:2STR2230
Stock:3000
Inv Date:06-12-2026
Price: N/A
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Part No:2STR2230
Stock:18000
Inv Date:06-12-2026
Price: N/A
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STMICROELECTRONICS 2STR2230 Low Voltage PNP Transistor Specifications:

  • Very low collector-emitter saturation voltage: Offers efficient power management.
  • High current gain characteristic: Provides enhanced performance.
  • Fast switching speed: Enables quick response times.
  • Miniature SOT-23 package: Suitable for surface mounting.
  • Compliant with 2002/93/EC: Meets European environmental standards.
  • Collector-emitter voltage (VCE= 0): -30V
  • Emitter-base voltage (IE= 0): -5V
  • Collector current: -1.5A
  • Collector peak current (tP< 5ms): -3A
  • Total dissipation at Tamb= 25°C: 0.5W
  • Storage temperature: -65 to 150°C
  • Max. operating junction temperature: 150°C
  • Thermal resistance junction-amb (1): 250 °C/W
  • Collector cut-off current (ICBO): -0.1µA
  • Emitter cut-off current (IEBO): -0.1µA
  • Collector-base breakdown voltage (IC= -100µA): -30V
  • Collector-emitter breakdown voltage (IB= 0): -30V
  • Emitter-base breakdown voltage (IC= 0): -5V
  • Collector-emitter saturation voltage (IC= -0.1A, IB= -1mA): -0.25V
  • Collector-emitter saturation voltage (IC= -1A, IB= -100mA): -0.45V
  • Collector-emitter saturation voltage (IC= -2A, IB= -200mA): -0.8V
  • Base-emitter saturation voltage: -0.9 to -1.25V
  • DC current gain (IC= -50mA, VCE= -2V): 210-280
  • DC current gain (IC= -0.5A, VCE= -2V): 170-560
  • Transition frequency: 100 MHz
  • Collector-base capacitance: 10 pF
  • Resistive load Turn-on time: 74 ns
  • Resistive load Turn-off time: 200 ns

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You can download the 2STR2230 datasheet or visit the STMICROELECTRONICS website for support.

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STMICROELECTRONICS

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