The M48Z02/12 ZEROPOWER® SRAM is a highly integrated 2 K x 8 non-volatile static RAM with built-in battery backup, ideal for secure data storage applications. Encased in a 24-pin CAPHAT™ DIP package with a lithium button cell, it guarantees data retention for at least 10 years without power. The device offers unlimited write cycles, automatic power-fail detection, and voltage protection, making it suitable for systems requiring reliable non-volatile memory with low power consumption and ease of integration into various electronic systems.
Supply Voltage: 4.75 to 5.5 V (M48Z02), 4.5 to 5.5 V (M48Z12)
Memory Capacity: 16 Kbit (2 K x 8)
Package: 24-pin PCDIP24, battery CAPHAT™
Data Retention: Minimum 10 years with battery backup
Write Cycles: Unlimited
Temperature Range: 0°C to 70°C
Power Dissipation: 1 W maximum
Input/Output Voltage: 0.3 to Vcc + 1 V
Input and Output Capacitance: Typically 10 pF
Supply Current: 80 mA (active), 3 mA (standby)
Battery Life: Over 10 years in retention mode
Operation Modes: Read, Write, Data Retention, Power-Fail Detection
Features: Auto power-fail detection, short-circuit proof, compatible with JEDEC SRAMs
Environmental Compliance: RoHS compliant
Package Mechanical Dimensions: A: 8.89–9.65 mm, D: 34.29–34.80 mm
Buy the STMicroelectronics Series 2Kx8 Non-Volatile SRAM: M48Z12150PC1
Purchase the STMicroelectronics Series 2Kx8 Non-Volatile SRAM M48Z12150PC1 online today and ensure reliable data storage for your electronic systems. Engineered for durability with a sweet spot of 10-year data retention, unlimited write cycles, and low power consumption, this device guarantees seamless operation in critical applications. Its integrated battery backup and auto power-fail detection provide additional security. Invest now to benefit from easy integration, environmental compliance, and performance that meets industrial requirements for longevity and efficiency.
Order your STMicroelectronics Series 2Kx8 Non-Volatile SRAM M48Z12150PC1 today and give your projects the dependable, long-lasting memory they deserve.
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