The STW26NM50 is a high-performance N-channel Power MOSFET based on STMicroelectronics' MDmesh™ technology. Designed for switching applications, it features a maximum drain-source voltage of 500 V, continuous drain current of 30 A, and excellent avalanche characteristics. The device benefits from low on-resistance, high dv/dt capability, and enhanced ESD robustness. Encased in a TO-247 package, it is suitable for high-power switching, industrial automation, and energy conversion circuits, ensuring reliable performance and efficient power management in demanding environments.
STMICROELECTRONICS STW26NM50 Power MOSFET Specifications:
Drain-source voltage: 500 V
Gate-source voltage: ±480 V
Continuous drain current at 25°C: 30 A
Pulsed drain current: 120 A
Total dissipation at 25°C: 313 W
Thermal resistance junction-case: 0.4 °C/W
Thermal resistance junction-ambient: 62.5 °C/W
Max storage temperature: -55 to 150 °C
Max operating junction temperature: 150 °C
Avalanche current: 13 A
Avalanche energy: 740 mJ
Gate threshold voltage: 3–5 V
On resistance (Rds(on)): 0.10 Ω
Gate-source Zener diode for ESD protection
Package: TO-247
Buy the STMicroelectronics Series Power MOSFET: STW26NM50
Acquire the STW26NM50 Power MOSFET easily online for your high-power switching needs. This N-channel device offers 500V, 30A ratings, low Rds(on), and superior avalanche performance. Ideal for industrial automation, energy efficiency, and high-speed switching circuits, it ensures reliable operation with excellent thermal management. The TO-247 package facilitates easy integration into complex systems, making it a perfect choice for engineers seeking durable, high-quality power transistors. Purchase now and enhance your electronic projects with confidence and efficiency.
Order your STMicroelectronics Series Power MOSFET STW26NM50 today and give your projects the dependable quality they deserve.
Frequently Asked Questions
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You can download the STW26NM50 datasheet or visit the STMICROELECTRONICS website for support.
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STMICROELECTRONICS
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