The BFP520 is a low noise silicon bipolar RF transistor optimized for low voltage applications, including cordless phones, satellite receivers, and oscillators up to 22 GHz. It offers high gain and low noise at high frequencies with a transit frequency fr of 45 GHz. Designed in an industry-standard halogen-free, ROHS-compliant package with visible leads, it is easy to use, making it ideal for high-frequency amplification tasks requiring low noise figures and reliable performance.
Collector-emitter voltage VcEs: 2.5 V at 25°C, 24 V at -55°C
Collector-base voltage VoB: 10 V
Emitter-base voltage VeB: 1 V
Collector current Ic: 50 mA
Base current IB: 5 mA
Total power dissipation Ptot: 125 mW at 105°C
Junction temperature Tj: 150°C
Transition frequency fr: 45 GHz at Ic = 20 mA
Collector-emitter breakdown voltage VeR: 3.5 V (min.), 4.5 V (max.)
Minimum noise figure: 0.95 dB at 1.8 GHz with Io=2mA
Power gain G: 24 dB at 1.8 GHz
Collector-base capacitance: 0.07 - 0.13 pF
Emitter-base capacitance: 0.33 pF
Package: SOT343, ROHS compliant, halogen-free
Maximum junction soldering point temperature: 450 K/W thermal resistance
Buy the Buy Infineon BFP520 Part Number BFP520H6327XTSA1 Online
Purchase the Infineon BFP520 RF transistor online today to ensure optimal performance in satellite receivers, cordless phones, and oscillation circuits up to 22 GHz. Featuring high gain, low noise figures, and ease of use with industry-standard packages, this device is ideal for high-frequency amplification. With specifications including a transition frequency of 45 GHz, low collector-emitter voltage, and a maximum power dissipation of 125 mW, it provides reliable performance in various RF applications. Order now and upgrade your RF components effortlessly.
Order your Infineon BFP520 RF transistor today and enhance your high-frequency projects with dependable low noise amplification capabilities.
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