The BFP183W by Infineon is a low-noise silicon bipolar RF transistor designed for broadband amplifiers operating at collector currents from 2 mA to 30 mA. It features a maximum frequency of 8 GHz, with a minimum noise figure of 0.9 dB at 900 MHz, making it ideal for high-gain applications. The device is RoHS compliant, halogen-free, and includes visible leads for easy handling and integration in RF circuits. It offers excellent thermal stability, high collector-emitter voltage of 12 V, and a total power dissipation of 450 mW, suited for advanced RF amplification needs.
Buy the Buy Infineon RF Transistor Part Number BFP183W Online
Enhance your RF circuit performance with the BFP183W low-noise RF transistor from Infineon. Designed for broadband high-gain amplifiers up to 8 GHz frequency, it offers a low noise figure of 0.9 dB at 900 MHz and a maximum collector-emitter voltage of 12 V. With RoHS compliance, halogen-free construction, and visible leads, it ensures easy handling and eco-friendly design. Perfect for high-frequency amplification applications requiring thermal stability, high gain, and reliable operation, it is available for purchase online with fast delivery and guaranteed authenticity.
Buy Infineon BFP183W low-noise RF transistor now and experience unmatched reliability and high-frequency performance in your broadband amplifiers.
Frequently Asked Questions
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