The IPP60R145CFD7 is a high-voltage 600V power MOSFET designed with Infineon's advanced CoolMOS™ CFD7 technology, optimized for soft switching applications like phase-shift full-bridge and LLC resonant topologies. It features ultra-fast body diodes, low gate charge, and excellent ruggedness for reliable operation in resonant topologies, server power supplies, telecom, and EV charging systems. The device provides high efficiency, increased power density, and robust performance under demanding conditions, meeting stringent industrial standards for reliability and efficiency.
INFINEON IPP60R145CFD7XKSA1 Power MOSFET Specifications:
Drain-source breakdown voltage: 600V
Continuous drain current: Not specified
Pulsed drain current: 58A
Avalanche energy single pulse: 68mJ
Power dissipation: 83W
Thermal resistance junction-case: 1.51°C/W
Thermal resistance junction-ambient: 62°C/W
Gate threshold voltage: 3.5V to 4.5V
Drain-source on-resistance: 0.289Ω
Gate charge total: 31nC
Reverse recovery charge: 0.9μC
Max operating junction temperature: -55°C to 150°C
dv/dt ruggedness: 120V/ns
Insulation withstand voltage: Not specified
Maximum diode forward voltage: 1.0V
Device package: PG-TO 220-3
Buy the Infineon IPP60R145CFD7 – Reliable Power Transistor for Industrial Applications
Enhance your power circuits with the Infineon IPP60R145CFD7, a 600V MOSFET featuring ultra-fast diodes, low gate charge, and excellent ruggedness. Designed for resonant topologies such as LLC and phase-shift full-bridge, it ensures high efficiency, reliability, and power density. Suitable for server, telecom, and electric vehicle applications, this device helps achieve optimal performance while reducing system size and thermal management costs. Trust Infineon's proven technology for your demanding industrial and high-voltage power solutions.
Buy Infineon IPP60R145CFD7 power MOSFET now and experience unmatched efficiency and high-density power performance in your industrial designs.
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