The 650V CoolMOS C7 power transistor by Infineon is a high-efficiency, fast-switching superjunction MOSFET designed for power management applications including PFC and PWM stages. It features low gate charge, excellent dv/dt ruggedness, and is qualified for industrial-grade applications. Its robust construction ensures higher system efficiency, reliability, and power density solutions, reducing cooling requirements and operating temperatures. Suitable for computing, telecom, UPS, and solar systems, it offers outstanding efficiency, easy driveability, and reliable performance in high-voltage environments.
INFINEON IPA65R225C7XKSA1 Power Transistor Specifications:
Drain-source breakdown voltage: 650 V
Maximum continuous drain current: Not specified
Pulsed drain current: 41 A
Avalanche energy (single pulse): 48 mJ
Gate threshold voltage: 3–4 V
Maximum gate-source voltage: ±20 V
Drain-source on-state resistance: 0.478 Ω
Gate charge (total): 20 nC
Input capacitance: 996 pF
Output capacitance: 14 pF
Thermal resistance junction-case: 4.38 °C/W
Maximum operating junction temperature: 150 °C
Storage temperature: -55°C to 150°C
Maximum power dissipation: 29 W
ESD withstand voltage: 2500 V
Buy the Buy Infineon CoolMOS C7 Part Number IPA65R225C7 Online
Enhance your power management designs with the Infineon CoolMOS C7 power transistor, offering 650V voltage ratings, low gate charge, and high dv/dt ruggedness. This superjunction MOSFET is ideal for PFC and PWM stages across industrial, telecom, UPS, and solar applications. Its reliable performance reduces cooling needs, lowers operating temperatures, and improves overall system efficiency. Easy to drive and qualified for industrial environments, this transistor ensures robust operation and increased power density, making it a top choice for high-voltage power solutions.
Get Infineon CoolMOS C7 power transistor today—built for high efficiency, fast switching, and long-lasting reliability in industrial power solutions.
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