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INFINEON IPN60R600PFD7SATMA1 Superjunction Power MOSFET

The 600V CoolIMOS PFD7 SJ Power Device is an advanced superjunction MOSFET offering extremely low conduction and switching losses, high efficiency, and high power density. Designed for high voltage applications such as chargers, adapters, lighting, and motor drives, it features a fast body diode, excellent thermal behavior, and outstanding ruggedness. Its compact PG-SOT223 package supports high switching frequencies and ZVS topologies, making it ideal for cost-sensitive, high-efficiency designs requiring slim profiles and reliable operation. Qualified per JEDEC standards for robust performance and durability.

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Source:Newark
Part No:IPN60R600PFD7SATMA1
Stock:3000
Inv Date:05-29-2026
Price: Unit price: $1.32
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Source:DigiKey
Part No:IPN60R600PFD7SATMA1
Stock:15000
Inv Date:05-29-2026
Price: Unit price: $1.56
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Part No:IPN60R600PFD7SATMA1
Stock:96
Inv Date:05-30-2026
Price: Unit price: $1.38
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Part No:IPN60R600PFD7SATMA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.645
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INFINEON IPN60R600PFD7SATMA1 Superjunction Power MOSFET Specifications:

  • Drain-source Breakdown Voltage: 600 V
  • Maximum Continuous Drain Current: 8.5 A
  • Pulsed Drain Current: 14 A
  • Avalanche Energy, Single Pulse: 17 mJ
  • Avalanche Energy, Repetitive: 0.08 mJ
  • Gate Threshold Voltage: 3.5 V to 4.5 V
  • Drain-Source On Resistance: 4.219 Ω at Vos=10V
  • Gate Resistance: 11.0 Ω
  • Storage Temperature: -40°C to +150°C
  • Junction Solder Point Thermal Resistance: 18.2°C/W
  • Operating Junction Temperature: -40°C to +150°C
  • Soldering Temperature (Wave): 260°C
  • Package: PG-SOT223
  • Insulation Withstand Voltage: Viso unspecified, tested per standards
  • Gate Charge Total: 8.5 nC
  • Diode Forward Voltage: 1.0 V at 1.7A
  • Reverse Recovery Time: 71 ns
  • Maximum Gate-Source Voltage: ±20 V
  • Maximum Gate-Source Dynamic Voltage: ±30 V

Buy the Buy Infineon CoolMOS PFD7 Part Number IPN60R600PFD7 Online

Purchase the Infineon CoolMOS PFD7 superjunction MOSFET online today and enhance your power conversion designs. This 600V device offers extremely low conduction and switching losses, supporting high-frequency applications like chargers, adapters, lighting, and motor drives. Its compact PG-SOT223 package allows for high power density and slim design integration. Qualified per JEDEC standards, it ensures reliable performance and ruggedness under demanding conditions. This MOSFET's fast switching, excellent thermal behavior, and rugged body diode make it an optimal choice for cost-sensitive, high-efficiency switching power supplies and related electronics.

Get Infineon CoolMOS PFD7 today—built for high efficiency, low losses, and high power density in your LED lighting, power supplies, and motor drive applications.

Frequently Asked Questions

Where can I buy INFINEON IPN60R600PFD7SATMA1?

You can click on the BUY or RFQ button to purchase IPN60R600PFD7SATMA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IPN60R600PFD7SATMA1?

You can download the IPN60R600PFD7SATMA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IPN60R600PFD7SATMA1?

INFINEON

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