The MRFE6VP6300HR5 is a high-power RF power transistor designed for broadband applications from 1.8 to 600 MHz. It offers 300W CW output power, pulsed peak power of 300W at 20% duty cycle, and excellent load mismatch handling of 65:1 VSWR. Featuring integrated ESD protection, wide voltage operation from 30V to 50V, and suitability for linear and broadband RF systems, it is ideal for industrial, broadcast, aerospace, and mobile radio applications. The device includes comprehensive thermal and electrical characteristics, making it a reliable and versatile component for high-frequency RF amplification.
NXP MRFE6VP6300HR5 Broadband RF Power Transistor Specifications:
Frequency Range: 1.8-600 MHz
Output Power: 300 Watts CW, 300 Watts Pulsed Peak
Load Mismatch Tolerance: 65:1 VSWR at 230 MHz
Supply Voltage: 30V to 50V
Gate-Source Voltage: -6.0V to +10V
Drain-Source Voltage: 0.5V to 130V
Maximum Junction Temperature: 225°C
Total Device Dissipation: 1050 W at 25°C
Thermal Resistance, Junction to Case: 0.19°C/W (CW), 0.05°C/W (pulsed)
ESD Protection: Human Body Model Class 2, Machine Model Class B, CDE Class IV
Case Style: 465M-01, Style 1
RoHS compliant
Buy the Freescale Series Broadband RF Power Transistor: MRFE6VP6300HR5
Purchase the Freescale MRFE6VP6300HR5 broadband RF power transistor online today. With its 300W CW output, wide frequency range of 1.8 to 600 MHz, and excellent load mismatch tolerance, this device is ideal for industrial, broadcast, aerospace, and mobile radio applications. Its integrated ESD protection, extended voltage operation from 30V to 50V, and robust thermal characteristics ensure high reliability and efficient performance in demanding high-frequency environments. Upgrade your RF systems with confidence by buying this versatile, RoHS-compliant transistor now.
Buy Freescale MRFE6VP6300HR5 now and experience unmatched reliability and performance in high-power broadband RF amplification.
Frequently Asked Questions
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