ONSEMI 4N35M Datasheet & Stock

The 4N35-M is a through hole general purpose phototransistor optocoupler in 6 pin DIP package. This optocoupler consist of gallium arsenide infrared emitting diode driving a silicon photo transistor. The device is mostly suitable for power supply regulators, digital logic inputs and microprocessor inputs.




Minimum current transfer ratio of 100% at IF=10A, Vce=10V

Isolation voltage of 4.17KVAC

Forward current (If) of 60mA

Single channel

UL 1577 and DIN-EN IEC60747-5-5 approved

Operating temperature range from -40°C to 100°C




Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.