This N-Channel enhancement mode power MOSFET is produced using advanced planar stripe and DMOS technology, designed to reduce on-state resistance and provide superior switching performance. Suitable for switched mode power supplies, active power factor correction, and electronic lamp ballasts, it offers 200 V drain-source voltage, 19.4 A continuous drain current, low gate charge of 31 nC, and a maximum on-resistance of 150 mΩ. The device is ideal for high-speed switching applications requiring reliability and efficiency in power management systems.
Purchase the ON Semiconductor FQP19N20 power MOSFET online today to achieve exceptional switching performance and high current handling capabilities. Designed for power supplies, motor control, and industrial applications, this robust MOSFET features 200 V drain-source voltage, 19.4 A continuous drain current, low on-resistance, and fast switching characteristics. Ensuring reliable operation in demanding environments, it is the ideal choice for engineers seeking high-performance power transistors. Get yours now for seamless integration into your electronic systems and reliable operation.
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You can download the FQP19N20 datasheet or visit the ONSEMI website for support.
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