The MSA1162GT1G is a PNP surface mount transistor designed for general purpose amplification. It features moisture sensitivity level 1 and is Pb-free, suitable for compact electronic circuits requiring reliable switching and amplification. With a collector-emitter voltage of up to 50V and a maximum collector current of 100mA, this transistor offers stable performance in low-power applications. Its thermal characteristics include a junction temperature of 150°C and power dissipation of 200mW. Perfect for various electronic devices needing dependable, small-size PNP transistors with robust electrical parameters.
ONSEMI MSA1162GT1G General Purpose Amplifier Specifications:
Collector-Base Voltage V(BR)CBO: 60 V
Collector-Emitter Voltage V(BR)CEO: 50 V
Emitter-Base Voltage V(BR)EBO: 7.0 V
Collector Current - Continuous: 100 mA
Collector Current - Peak: 200 mA
Power Dissipation: 200 mW
Junction Temperature: 150°C
Storage Temperature: -55°C to +150°C
Thermal Resistance: Characteristic, typical junction temperature 150°C
Package: SC-59, CASE 318D
Marking: MSA1162GT1G, Device Code, Date Code
Maximum Operating Frequency: 10 MHz
Buy the ON Semiconductor Series General Purpose Amplifier: MSA1162GT1G
Purchase the ON Semiconductor Series General Purpose Amplifier MSA1162GT1G online today for dependable PNP surface mount transistor solutions. Ideal for low-power amplification with a collector-emitter voltage of 50V and a maximum collector current of 100mA, this Pb-free, moisture-sensitive device ensures performance stability. Its thermal characteristics include a junction temperature of 150°C and power dissipation of 200mW, making it perfect for compact electronic applications needing reliable switching and amplification capabilities. Order now for quick delivery and seamless integration into your projects.
Order your ON Semiconductor Series General Purpose Amplifier MSA1162GT1G today and give your electronic circuits reliable amplification performance.
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