The high-speed IGBT from the HB2 series features a trench gate field-stop structure optimized for conduction and switching performance. With a maximum junction temperature of 175°C and low Vce(sat) at 1.65 V for 20A load, it includes a fast, soft recovery co-packaged diode. Suitable for welding, power factor correction, UPS, solar inverters, and chargers, it offers low thermal resistance, tight parameter distribution, and is housed in a TO-220FP package for efficient heat dissipation. Designed for high efficiency and reliable operation in demanding switching applications.
Dimensions and mechanical data conform to TO-220FP specifications
Buy the STMicroelectronics Series HB2 IGBT: STGF20H65DFB2
Order the STMicroelectronics high-speed IGBT module STGF20H65DFB2 today and enjoy efficient, reliable operation in welding, UPS, solar inverters, and charging systems. Designed with an advanced trench gate structure, it ensures low conduction losses, fast switching, and minimal thermal resistance. Packaged in a TO-220FP case for easy heat dissipation, this device is perfect for demanding industrial automation and power conversion applications. Secure your inventory now and capitalize on superior performance.
Buy STMicroelectronics HB2 IGBT STGF20H65DFB2 now and experience unmatched reliability and performance in high-speed switching applications.
Frequently Asked Questions
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You can download the STGF20H65DFB2 datasheet or visit the STMICROELECTRONICS website for support.
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STMICROELECTRONICS
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