The 5th Generation thinQ!™ Silicon Carbide Schottky Diode from Infineon features a 650V blocking voltage, high surge current capability, and excellent thermal and switching characteristics. It is designed for industrial power management applications like switch mode power supplies, solar inverters, and UPS systems. With a compact design, low forward voltage drop of around 1.7V at 10A, and RoHS compliance, this diode ensures efficiency, reliability, and system cost reduction by enabling higher frequency operation and reduced cooling requirements. Qualified under JEDEC standards, it offers improved thermal performance and system efficiency for advanced power solutions.
Surge Non-Repetitive Forward Current: 82 A at 25°C, 10 ms
Peak Forward Current: 34 A at T=25°C, 10 ms
Diode Forward Voltage: 1.7 V at 10 A, T=25°C
Reverse Current: 0.5 mA at 650 V, T=25°C
Total Capacitance: 300 pF at 1 V, 1 MHz
Thermal Resistance (junction-ambient): 62 K/W
Power Dissipation: 89 W at T=25°C
Operating Temperature Range: -55°C to +175°C
Package: PG-TO220-2
RoHS Compliant, Pb-Free Lead Plate, Qualified per JEDEC standards
Buy the Infineon IDH10G65C5 – Reliable Silicon Carbide Diode for Industrial Applications
Purchase the Infineon Silicon Carbide Diode now and experience industry-leading efficiency and reliability in power conversion. Its high surge current capacity, low forward voltage drop, and excellent thermal performance make it ideal for advanced power supply, inverter, and UPS systems. Designed for high-temperature operation and optimized for system efficiency, this diode reduces cooling requirements and EMI, ensuring lower system costs and increased power density. Buy online today for superior quality, proven performance, and quick delivery of this cutting-edge power semiconductor device.
Get Infineon IDH10G65C5 today—built for precision, efficiency, and long-lasting durability in power management solutions.
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