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NXP MRFE6VS25NR1 RF Power Transistor

High-performance wideband RF power transistor designed for both narrowband and broadband ISM, broadcast, and aerospace applications operating from 1.8 to 2000 MHz. Fabricated on Freescale's enhanced ruggedness platform, it handles up to 50V Vpp with excellent load mismatch tolerance, making it suitable for high VSWR conditions. Features include low thermal resistance, integrated stability, and extension to high junction temperatures up to 225°C, ensuring reliable operation in demanding environments such as aerospace and industrial RF amplification systems. Comes in a TO-270 package with robust specifications for high power and ruggedness.

Authorized Distributors
Part No:MRFE6VS25NR1
Stock:0
Inv Date:06-10-2026
Price: N/A
Buy/RFQ:
Part No:MRFE6VS25NR1
Stock:0
Inv Date:06-09-2026
Price: Unit price: $36.86
Buy/RFQ:

NXP MRFE6VS25NR1 RF Power Transistor Specifications:

  • Frequency Range: 1.8-2000 MHz
  • Maximum Output Power: 25 W (PEP)
  • Drain-Source Voltage: 50 V
  • Load Mismatch Tolerance: VSWR >65:1
  • Gate-Source Voltage: -6.0 to +10 V
  • Thermal Resistance Junction to Case: 1.2 °C/W
  • Junction Temperature Range: -40°C to +225°C
  • Package: TO-270 (Gull Wing, G) or TO-270-2 (Gull Wing, NG)
  • ESD Protection: Human Body Model 2500 V
  • Ruggedness tested at load mismatches with no device degradation
  • Operation in high VSWR environments supported
  • Designed for broadband and narrowband applications with high power efficiency
  • Typical Performance: Vpp = 50 Volts, Pout = 25 W
  • Built with rugged enhancement-mode N-channel MOSFET technology
  • Extended temperature range for aerospace and industrial environments
  • RoHS Compliant

Buy the Freescale MRFE6VS25NR1 – Reliable RF Power Transistor for Industrial Applications

Purchase the reliable Freescale MRFE6VS25NR1 RF power transistor online today. Designed for high-frequency broadband and narrowband applications, it offers exceptional ruggedness, high power output of 25 W, and excellent load mismatch tolerance. Ideal for aerospace, broadcast, and industrial RF amplification, this transistor supports operation from 1.8 to 2000 MHz with a maximum drain-source voltage of 50V. Its advanced rugged ruggedness platform ensures durable, high-performance operation in demanding environments. Secure your supply now for dependable, high-power RF amplification solutions.

Order your Freescale Series MRFE6VS25NR1 wideband RF power transistor today and give your projects the dependable quality they deserve, suitable for demanding aerospace and industrial RF systems.

Frequently Asked Questions

Where can I buy NXP MRFE6VS25NR1?

You can click on the BUY or RFQ button to purchase MRFE6VS25NR1 from an authorized NXP distributor.

How do I troubleshoot issues or seek technical support for part MRFE6VS25NR1?

You can download the MRFE6VS25NR1 datasheet or visit the NXP website for support.

Who is the manufacturer of MRFE6VS25NR1?

NXP

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