The IRF3808SPbF is a high-performance HEXFET power MOSFET designed for industrial motor drive applications. It features an ultra-low on-resistance of 69 mΩ at 10V gate drive, with a drain-source breakdown voltage of 75V, supporting high current operation up to 106A continuously at 26°C. The device offers fast switching speeds, a maximum junction temperature of 175°C, and is lead-free, making it reliable and efficient for power switching. Its optimized thermal characteristics include junction-to-case resistance of 0.075°C/W and junction-to-ambient dissipation of 40°C/W.
INFINEON IRF3808STRLPBF Hexfet Power MOSFET Specifications:
Drain-source breakdown voltage: 75V
Static drain-to-source on-resistance: 69 mΩ at 10V
Maximum continuous drain current: 106A at 26°C
Maximum junction temperature: 175°C
Power dissipation: 200W at 25°C
Thermal resistance junction-to-case: 0.075°C/W
Thermal resistance junction-to-ambient: 40°C/W
Gate-to-source voltage: ±20V
Single pulse avalanche energy: 430mJ
Operating temperature range: -55°C to +175°C
Lead-free construction, RoHS compliant
Fast switching Speed and Repetitive Avalanche capability
Buy the International Series IRF3808 HEXFET Power MOSFET: IRF3808SPbF
Order the International IRF3808SPbF HEXFET power MOSFET online today to ensure optimal performance in your power switching needs. This device offers an ultra-low on-resistance of 69 milliohms at 10V, supporting continuous drain currents up to 106A, perfect for industrial motor drives and high-speed switching applications. Its fast switching speed, high junction temperature tolerance of 175°C, and lead-free design make it a reliable choice for demanding environments. Purchase now and improve your system efficiency and durability with this high-quality MOSFET.
Buy International IRF3808SPbF now and experience unmatched reliability and performance for high-current industrial applications.
Frequently Asked Questions
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